FQD13N06L, FQU13N06L دیتاشیت

FQD13N06L, FQU13N06L

مشخصات دیتاشیت

نام دیتاشیت FQD13N06L, FQU13N06L
حجم فایل 1033.103 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FQD13N06L, FQU13N06L

دانلود دیتاشیت

سایر مستندات

FQD13N06LTM 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQD13N06LTM
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;28W
  • Total Gate Charge (Qg@Vgs): 6.4nC@5V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 350pF@25V
  • Continuous Drain Current (Id): 11A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@10V,5.5A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FQD1
  • detail: N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak

محصولات مشابه